Samsung Electronics has begin mass producing the first 16-gigabit LPDDR5 mobile DRAM using extreme ultraviolet (EUV) technology at its Pyeongtaek plant.
Built on Samsung’s third-generation 10nm-class process, the new chip will enable more consumers to enjoy the benefits of 5G and AI features in next-generation smartphones. It is based on the 1z process node and the first memory to be mass produced using EUV technology.
“The 1z-based 16Gbit LPDDR5 elevates the industry to a new threshold, overcoming a major developmental hurdle in DRAM scaling at advanced nodes,” said Jung-bae Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics.
At 6,400 megabits per second, the new LPDDR5 is about 16 percent faster than the 12Gb LPDDR5 (5,500Mb/s) found in most of today’s flagship mobile devices. When made into a 16GB package, the LPDDR5 can transfer about 10 5GB-sized full-HD movies, or 51.2GB of data, in one second.
Enabling 5G and multi-camera smartphones
It is 30 percent thinner than its predecessor, enabling 5G and multi-camera smartphones as well as foldable devices to pack more functionality into a slim design. The 16Gb LPDDR5 can build a 16GB package with only eight chips, whereas its 1y-based predecessor requires 12 chips (eight 12Gb chips and four 8Gb chips) to provide the same capacity.
By delivering the first 1z-based 16GB LPDDR5 package to global smartphone makers, Samsung plans to further strengthen its presence in the flagship mobile device market throughout 2021.
Samsung will also expand the use of its LPDDR5 offerings into automotive applications, offering an extended temperature range to meet strict safety and reliability standards in extreme environments.