IME and Soitec to develop next-gen silicon carbide semiconductor

The Institute of Microelectronics (IME) and Soitec are collaborating on a research to develop next-generation silicon carbide (SiC) semiconductor devices to power electric vehicles and advanced high-voltage electronic devices.

Both parties will leverage Soitec’s proprietary technologies such as Smart Cut and IME’s pilot production line to create 200mm SiC semiconductors substrates.

The joint research will contribute towards developing a holistic SiC ecosystem and boost semiconductor manufacturing capabilities in Singapore and the region.

By the time the collaboration ends in mid-2024, the partners hope to have developed SiC epitaxy and metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication processes for Smart Cut SiC substrates, established a benchmark for SiC power MOSFET devices fabricated on Smart Cut SiC substrates, and demonstrated the advantages of the process with conventional bulk substrates.

“This joint research between A*STAR’s IME and Soitec to develop next-generation semiconductor devices using innovative technologies is made possible by both organisations’ deep capabilities in R&D,” said Terence Gan, Executive Director of IME.

“The collaboration paves the way for the development of advanced epitaxy solutions to produce higher quality SiC wafers with energy-efficient characteristics, given the exciting potential of this material,” said Christophe Maleville, Chief Technology Officer and Senior Executive VP at Soitec.

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